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| Excelics * * * * * * 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100 rd EIB1314-2P MAX MIN 32 7 TYP 33.0 8 MAX UNIT dBm dB MIN 32.5 8 TYP 33.5 9 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 30 880 40 1440 1500 -1.0 -15 8 -2.5 1700 1100 25 850 46* 1360 700 -2.0 -15 8 o % mA dBm 1700 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical -45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 180mA 32dBm 175oC -65/175oC 17W 8V -3V Idss 30mA @ 3dB Compression 150oC -65/150oC 14.2W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com |
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